Atomic layer structure of manganese atoms on wurtzite gallium nitride „0001̄..

Submonolayer quantities of Mn are deposited on wurtzite GaN 0001̄ . The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3 reconstruction along 101̄0 , but only 1 along 112̄0 . Diffraction analysis shows that the 3 streak intensity is maximized at 0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the 101̄0 direction with a spacing of 3a /2 along chains and 3a /2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a 3 3-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed. © 2008 American Institute of Physics. DOI: 10.1063/1.3006434